The electrochemical profiling technique used to measure dopant concentration in p-n junction silicon layer is described. Measurement parameters (electrolyte type, etching and measurement voltages) that produce optimum condition for profiling are discussed. ECV technique provided profiles of dopant concentration versus wafer depths were determined. The resulting data allow us to predict the junction depth within 0.2 µm over a range from 1.0 to 2.0 µm. A plot of the dopant concentration, N(w) versus the product of the junction depth, Xj, agrees well with data.
Pn. Nurul Akmal Binti Kamaruddin